Applications & selection

SiC materials are selected by end application; CMP pads are selected by workpiece, polishing stage, equipment and target metrics. The two product lines are reviewed separately.

SiCCMPSample → Batch
SiC

SiC material selection

Start with the device, optical or crystal-growth use, then define material form, size and grade.

Explore SiC products
Application / processSuggested productConfirm before selection
Power electronics: EV, charging, solar and storageN-type conductive 4H-SiC substrateVoltage class, device route, size, thickness, surface and quality grade
RF and communicationsHigh-purity semi-insulating SiC substrateResistivity, polytype, orientation, size and defect criteria
Optical windows, lasers and thermal managementHPSI SiC, optical wafer or heat-sink waferDiameter, thickness, surface quality, optical and thermal targets
Crystal growth and materials R&DSiC powder, seed crystal or ingotPurity, size, doping, polytype and growth route
Process setup and equipment qualificationSliced wafer, dummy wafer or carrierTool purpose, quantity, dimensions and acceptable grade
CMP

CMP polishing pad selection

Start with the workpiece and polishing stage, then review pad structure and equipment fit.

Explore polishing pads
Application / processSuggested productConfirm before selection
Wafer or substrate rough polishingPolyurethane polishing padRemoval rate, wear, hardness, deformation and groove pattern
Wafer or substrate fine polishingNonwoven polishing padPermeability, roughness, surface defects and slurry
Lower roughness and better within-wafer uniformitySuede-type nonwoven polishing padCompression, elasticity, surface structure and uniformity target
Equipment and process validationConfiguration selected against tool and targetsWorkpiece, platen size, speed, pressure, slurry and target metrics
These are initial selection directions only. Final specifications require confirmation against the customer tool, process conditions, sample results and target metrics.

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