Semi-Insulating SiC Substrates & Optical Wafers
HPSI 4H, ρ ≥1E8 ohm·cm, FWHM (0004) ≤45 arcsec. Optical wafers n >2.65 @589 nm.
High-purity semi-insulating SiC substrates serve GaN-on-SiC RF devices, high-power laser diode heat sinks and radar electronics. SiC optical wafers are used for windows, AR eyewear lenses and devices operating in harsh environments.
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Technical specifications
| Product | Size | Grade | Thickness | Key specification |
|---|---|---|---|---|
| Semi-insulating HPSI | 4 inch | Production / Research / Dummy | 500 ± 25 μm | ρ ≥1E10 ohm·cm, micropipe ≤1 /cm² |
| Semi-insulating HPSI | 6 inch | Production / Research / Dummy | 500 ± 25 μm | ρ ≥1E8 ohm·cm, TTV ≤5 μm |
| Semi-insulating HPSI | 8 inch | Production / Dummy | 500 ± 25 μm | ρ ≥1E8 ohm·cm, TTV ≤10 μm |
| Optical wafer | 4 inch | Production | 500 / 700 ± 10 μm | n >2.65 @589 nm, double-side CMP |
| Optical wafer | 6 inch | Production | 500 / 700 ± 10 μm | Haze <0.3 %, micropipe ≤0.2 /cm² |
| Optical wafer | 8 inch | Production | 500 / 700 ± 10 μm | Absorption <0.5 % @450–650 nm |
Typical parameters shown. Exact values per current technical specification.
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