N-type Conductive SiC Substrates
4H, nitrogen-doped, 0.015–0.025 ohm·cm. 4 / 6 / 8 / 12 inch, double-side polished.
N-type single-crystal silicon carbide substrates are the base material for power devices — MOSFETs and Schottky diodes used in traction inverters, charging stations, PV and energy-storage converters. Supplied in three grades: Ultra-P, Production and Dummy.
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Technical specifications
| Size | Grade | Diameter | Thickness | Key specification |
|---|---|---|---|---|
| 4 inch | Production / Dummy | 100.0 mm | ≈350 μm | 4H, nitrogen doped |
| 6 inch | Ultra-P | 150.0 ± 0.2 mm | 350 ± 25 μm | Micropipe <0.1 /cm², TSD ≤10 /cm², TUA ≥98 % |
| 6 inch | Production | 150.0 ± 0.2 mm | 350 ± 25 μm | Micropipe <0.2 /cm², TTV ≤5 μm, TUA ≥95 % |
| 6 inch | Dummy | 150.0 ± 0.2 mm | 350 ± 25 μm | Micropipe <10 /cm², process dummy |
| 8 inch | Ultra-P | 200.0 ± 0.2 mm | 350 / 500 ± 25 μm | Micropipe <0.1 /cm², LTV ≤2 μm, TTV ≤5 μm |
| 8 inch | Production | 200.0 ± 0.2 mm | 350 / 500 ± 25 μm | Micropipe <0.5 /cm², TTV ≤10 μm, TUA ≥95 % |
| 8 inch | Dummy | 200.0 ± 0.2 mm | 350 / 500 ± 25 μm | Micropipe <50 /cm², process dummy |
| 12 inch | Engineering sample | 300.0 ± 0.5 mm | 700 ± 50 μm | Si-face CMP, notch orientation |
| As-cut | per substrate grade | 4 / 6 / 8 inch | on request | Sliced wafers, unpolished |
Typical parameters shown. Exact values per current technical specification; custom specs available.
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