Ingots, Seed Crystals, Powder & Moissanite
SiC ingots 4 / 6 / 8 inch, seeds 150–160, CVD and nitrogen-doped powder, moissanite A/B/C/R.
Feedstock and blanks for crystal growers and wafer processors: PVT-grown ingots, seed crystals, high-purity and nitrogen-doped powder, plus moissanite, carrier wafers and heat-sink wafers.
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Technical specifications
| Category | Sizes | Grade | Unit |
|---|---|---|---|
| SiC ingot, n-type | 6 inch Ø150.25 ± 0.25 mm; 8 inch Ø200.25 ± 0.25 mm | Ultra-P / P / D / NG | whole ingot |
| SiC ingot, semi-insulating | 4 / 6 inch | P / D | whole ingot |
| Seed crystals | 150 / 153 / 155 / 160 | P / D | pcs |
| SiC powder | CVD 1–15 / 3–15 mm; N-doped 0.4–2 / 0.8–2 mm; high purity | — | kg (MOQ 5 kg) |
| Moissanite | — | A / B / C / R | g |
| Carrier wafers | Ø100 / 104 / 150 / 159 mm, 1 mm thick | — | pcs |
| Heat-sink wafers | Ø100 / 104 mm and others, 0.5 / 1 mm thick | — | pcs |
Ingots are priced per millimetre and shipped whole. Powder MOQ 5 kg. Other sizes on request.
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