
N-type Conductive SiC Substrates
N-type 4H-SiC double-side polished substrates in 4–12 inch sizes.
- 4H-SiC
- 4 / 6 / 8 / 12″
- N-type
We supply SiC substrates, optical wafers, ingots, seed crystals, powder and CMP polishing pads—with specification review, sample validation and reliable delivery.
Double-side polished SiC substratesFrom finished substrates to upstream crystal materials, selected by application, specification and grade.

N-type 4H-SiC double-side polished substrates in 4–12 inch sizes.

High-purity semi-insulating SiC and optical wafers for RF and optical applications.

Ingots, seed crystals and powder for crystal growth and materials research.
Polyurethane, nonwoven and suede-type nonwoven pads selected by workpiece, polishing stage, equipment and target metrics.

Foamed cured polyurethane with a closed-cell structure; wear resistant, efficient and dimensionally stable for rough polishing.
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Permeable polymer-fibre structure with configurable microstructure for fine polishing processes.
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Lower hardness, higher compression and good elasticity to improve roughness and within-wafer uniformity.
Learn moreTechnical confirmation comes before quotation to reduce unnecessary iterations.
Size, grade, quantity and application
Parameters, documents and sample path
Packing, logistics and traceability

We confirm product family, size, grade, key metrics and documentation from the application before samples or volume supply.
Tell us the size, grade and quantity — we will prepare a technical and commercial proposal.