N-type conductive SiC substrates
Nitrogen-doped 4H-SiC, double-side polished, available in 4 / 6 / 8 / 12 inch sizes.
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Products
Two product lines are presented separately: silicon carbide materials and CMP polishing pads. Choose by product family to keep specifications and applications clear.
PRODUCT LINE 01 · SiC
SiCSilicon carbide materials
Finished substrates and optical wafers, plus ingots, seed crystals and powder for crystal growth.
High-purity semi-insulating SiC & optical wafers
For RF, optical windows, lasers and precision optics, with specification review and sample validation.
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Ingots, seeds and SiC powder
Materials for PVT growth, R&D and wafer processing in multiple sizes and purity grades.
Learn moreN-type substratesHPSI substratesOptical wafersAs-cut wafersSiC ingotsSeed crystalsSiC powderCarrier wafers & heat-spreader wafers
PRODUCT LINE 02 · CMP
CMPCMP polishing pads
Polyurethane, nonwoven and suede-type nonwoven pads selected by workpiece, polishing stage, equipment and target metrics.
Polyurethane polishing pads
Foamed cured polyurethane with a closed-cell structure; wear resistant, efficient and dimensionally stable for rough polishing.
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Nonwoven polishing pads
Permeable polymer-fibre structure with configurable microstructure for fine polishing processes.
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Suede-type nonwoven polishing pads
Lower hardness, higher compression and good elasticity to improve roughness and within-wafer uniformity.
Learn moreRough polishingFine polishingGroove patternHardness & compressionEquipment fitSample validation
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